N.E.B Cowern: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Suppression of phosphorus diffusion by carbon co-implantation

Pawlak, B. J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S. B., Collart, E. J. H., Cowern, N. E. B.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 262 KB

english, 2006

2

Transient enhanced diffusion and deactivation of ion-implanted As in strained Si

G.D.M. Dilliway, A.J. Smith, J.J. Hamilton, J. Benson, Lu Xu, P.J. McNally, G. Cooke, H. Kheyrandish, N.E.B. Cowern

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 151 KB

english, 2005

3

Functional Materials for Sustainable Energy Applications || Silicon-based photovoltaic solar cells

Year:

2012

Language:

english

File:

PDF, 1.51 MB

english, 2012

4

Charge-exchange cross sections of nearly fully stripped 16O ions in solid targets

C.J. Sofield, N.E.B. Cowern, J. Draper, L. Bridwell, J.M. Freeman, C.J. Woods, M. Spencer-Harper

Journal:

Nuclear Instruments and Methods

Year:

1980

Language:

english

File:

PDF, 300 KB

english, 1980

5

[IEEE 2008 16th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Las Vegas, NV, USA (2008.09.30-2008.10.3)] 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions

Rosseel, E., Vandervorst, W., Clarysse, T., Goossens, J., Moussa, A., Lin, R., Petersen, D.H., Nielsen, P.F., Hansen, O., Bennett, N.S., Cowern, N.E.B.

Year:

2008

Language:

english

File:

PDF, 2.57 MB

english, 2008

6

Defects evolution and dopant activation anomalies in ion implanted silicon

F. Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, N. Cherkashin, O. Marcelot, A. Claverie, W. Lerch, S. Paul, N. Cowern

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 1.57 MB

english, 2006

7

Overlayer stress effects on defect formation in Si and Ge

Nick E.B. Cowern, Nick S. Bennett, Chihak Ahn, Joo Chul Yoon, Silke Hamm, Wilfried Lerch, Hamid Kheyrandish, Filadelfo Cristiano, Ardechir Pakfar

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 972 KB

english, 2010

8

Raman study of the strain and H2preconditioning effect on self-assembled Ge island on Si (001)

Lu Xu, P. J. McNally, G. D. M. Dilliway, N. E. B. Cowern, Chris Jeynes, Ernest Mendoza, Peter Ashburn, Darren M. Bagnall

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2005

Language:

english

File:

PDF, 968 KB

english, 2005

9

Raman scattering studies of ultrashallow Sb implants in strained Si

L. O’Reilly, N. S. Bennett, P. J. McNally, B. J. Sealy, N. E. B. Cowern, A. Lankinen, T. O. Tuomi

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 322 KB

english, 2008

10

Experiments on atomic-scale mechanisms of diffusion

Cowern, N., van de Walle, G., Gravesteijn, D., Vriezema, C.

Journal:

Physical Review Letters

Year:

1991

Language:

english

File:

PDF, 169 KB

english, 1991

11

[IEEE 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (30 Sept.-2 Oct. 2001)] Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) - Ultra shallow boron base profile with carbon implantation

Magnee, P.H.C., Kemmeren, A.L.A.M., Cowern, N.E.B., Slotboom, J.W., Havens, R.J., Huizing, H.G.A.

Year:

2001

Language:

english

File:

PDF, 347 KB

english, 2001

12

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Donor deactivation at high doping limit: Donor pair and impurity band model

Ahn, Chihak, Choi, Woosung, Kubotera, Hiroyuki, Kayama, Yasuyuki, Schmidt, Alexander, Lee, Keunho, Park, Youngkwan, Cowern, Nick. E. B

Year:

2013

Language:

english

File:

PDF, 1.37 MB

english, 2013

13

Interstitial traps and diffusion in epitaxial silicon films

Cowern, N. E. B.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 691 KB

english, 1994

14

Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

Mannino, G., Cowern, N. E. B., Roozeboom, F., van Berkum, J. G. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 311 KB

english, 2000

15

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Collart, E. J. H., Felch, S. B., Cowern, N. E. B.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 326 KB

english, 2006

16

Impurity diffusion via an intermediate species: The B-Si system

Cowern, N. E. B., Janssen, K. T. F., van de Walle, G. F. A., Gravesteijn, D. J.

Journal:

Physical Review Letters

Year:

1990

Language:

english

File:

PDF, 701 KB

english, 1990

17

Energy straggling of 5.486-MeV alpha particles in Al

Sofield, C. J., Cowern, N. E. B., Freeman, J. M., Parthasaradhi, K.

Journal:

Physical Review A

Year:

1977

Language:

english

File:

PDF, 492 KB

english, 1977

18

Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon

Mannino, G., Stolk, P. A., Cowern, N. E. B., de Boer, W. B., Dirks, A. G., Roozeboom, F., van Berkum, J. G. M., Woerlee, P. H., Toan, N. N.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 314 KB

english, 2001

19

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Boron pile-up phenomena during ultra shallow junction formation

Ferri, M., Solmi, S., Giubertoni, D., Bersani, M., Hamilton, J. J., Kah, M., Cowern, N.E.B., Kirkby, K., Collart, E.J.H.

Year:

2007

Language:

english

File:

PDF, 3.27 MB

english, 2007

20

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

Graoui, H., Hilkene, M., McComb, B., Castle, M., Felch, S., Cowern, N.E.B., Al-Bayati, A., Tjandra, A., Foad, M. A.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 478 KB

english, 2004

21

[IEEE 2014 International Renewable and Sustainable Energy Conference (IRSEC) - Ouarzazate, Morocco (2014.10.17-2014.10.19)] 2014 International Renewable and Sustainable Energy Conference (IRSEC) - Optimization of a ZnO/PbS depleted heterojunction quantum dot photovoltaic cell

Philip, Matthew, Cowern, Nick

Year:

2014

Language:

english

File:

PDF, 542 KB

english, 2014

22

Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers

Bennett, Nicholas S., Ahn, Chihak, Cowern, Nicholas E.B., Pichler, Peter

Journal:

Solid State Phenomena

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

23

Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?

N. S. Bennett, A. J. Smith, R. M. Gwilliam, R. P. Webb, B. J. Sealy, N. E. B. Cowern, L. O’reilly, P. J. Mcnally

Year:

2008

Language:

english

File:

PDF, 655 KB

english, 2008

24

Charge-exchange effects in energy-loss straggling

C.J. Sofield, N.E.B. Cowern, J.M. Freeman

Journal:

Nuclear Instruments and Methods

Year:

1980

Language:

english

File:

PDF, 308 KB

english, 1980

25

On a reported discrepancy between predicted and observed energy-loss straggling of fully stripped ions

C.J. Sofield, N.E.B. Cowern, J.M. Freeman

Journal:

Nuclear Instruments and Methods

Year:

1980

Language:

english

File:

PDF, 174 KB

english, 1980

26

The uniformity of carbon stripper foils

C.J. Sofield, L.B. Bridwell, N.E.B. Cowern, N.R.S. Tait, D.W.L. Tolfree

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1981

Language:

english

File:

PDF, 460 KB

english, 1981

27

The role of charge-exchange in energy-loss straggling

C.J. Sofield, N.E.B. Cowern, J.M. Freeman

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1981

Language:

english

File:

PDF, 618 KB

english, 1981

28

The evolution of ΔE/ΔX for 7 MeV/u 16O ions in carbon

LB Bridwell, NEB Cowern, PM Read, CJ Sofield, Neil Sanderson

Journal:

Year:

1989

Language:

english

File:

PDF, 247 KB

english, 1989

29

The light element impurity content of self-supporting carbon foils

C.J. Sofield, C.J. Woods, N.E.B. Cowern, L.B. Bridwell, J.M. Butcher, J.M. Freeman

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1982

Language:

english

File:

PDF, 345 KB

english, 1982

30

Comparison of theoretical evaluations of energetic ion range distributions

N.E.B. Cowern, J.P. Biersack

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 226 KB

english, 1983

31

The gas-solid density effect for MeV/u ions: Charge changing cross sections and the effective charge

N.E.B. Cowern, C.J. Woods, C.J. Sofield

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 440 KB

english, 1983

32

Energy-straggling measurements with energetic C ions in Al and Ag

N.E.B. Cowern, P.N. Trehan, C.J. Sofield, L.B. Bridwell, S.M. Ferguson

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 258 KB

english, 1983

33

Projected range distributions of low-, intermediate-, and high-energy ions

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 695 KB

english, 1983

34

Comment on “theoretical study of the stopping powers for pre-equilibrium heavy ion beams”

N.E.B. Cowern, P.M. Read, C.J. Sofield

Journal:

Physics Letters A

Year:

1984

Language:

english

File:

PDF, 121 KB

english, 1984

35

Differential Hall profiling of ultra-shallow junctions in Si and SOI

N.S. Bennett, A.J. Smith, B. Colombeau, R. Gwilliam, N.E.B. Cowern, B.J. Sealy

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 116 KB

english, 2005

36

Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ

J.J. Hamilton, E.J.H. Collart, B. Colombeau, M. Bersani, D. Giubertoni, J.A. Sharp, N.E.B. Cowern, K.J. Kirkby

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 190 KB

english, 2005

37

Structural and electrical characterisation of ion-implanted strained silicon

K. Horan, A. Lankinen, L. O’Reilly, N.S. Bennett, P.J. McNally, B.J. Sealy, N.E.B. Cowern, T.O. Tuomi

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 556 KB

english, 2008

38

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

J.J. Hamilton, E.J.H. Collart, B. Colombeau, C. Jeynes, M. Bersani, D. Giubertoni, J.A. Sharp, N.E.B. Cowern, K.J. Kirkby

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 144 KB

english, 2005

39

Role of point defects in the transient diffusion and clustering of implanted boron in silicon

N.E.B. Cowern, H.F.F. Jos, K.T.F. Janssen

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 417 KB

english, 1989

40

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

C.J. Ortiz, F. Cristiano, B. Colombeau, A. Claverie, N.E.B. Cowern

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 175 KB

english, 2004

41

Suppression of boron interstitial clusters in SOI using vacancy engineering

A.J. Smith, B. Colombeau, R. Gwilliam, N.E.B. Cowern, B.J. Sealy, M. Milosavljevic, E. Collart, S. Gennaro, M. Bersani, M. Barozzi

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 196 KB

english, 2005

42

Boron diffusion in strained and strain-relaxed SiGe

C.C. Wang, Y.M. Sheu, Sally Liu, R. Duffy, A. Heringa, N.E.B. Cowern, P.B. Griffin

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 618 KB

english, 2005

43

On the analysis of the activation mechanisms of sub-melt laser anneals

T. Clarysse, J. Bogdanowicz, J. Goossens, A. Moussa, E. Rosseel, W. Vandervorst, D.H. Petersen, R. Lin, P.F. Nielsen, Ole Hansen, G. Merklin, N.S. Bennett, N.E.B. Cowern

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 829 KB

english, 2008

44

Transient enhanced diffusion of B at low temperatures under extrinsic conditions

L.F. Giles, B. Colombeau, N. Cowern, W. Molzer, H. Schaefer, K.H. Bach, P. Haibach, F. Roozeboom

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 816 KB

english, 2005

45

Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si

E. Lampin, C.J. Ortiz, N.E.B. Cowern, B. Colombeau, F. Cristiano

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 281 KB

english, 2005

46

Transient activation model for antimony in relaxed and strained silicon

Y. Lai, N.S. Bennett, C. Ahn, N.E.B. Cowern, N. Cordero, J.C. Greer

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 463 KB

english, 2009

47

Ion-implantation and diffusion behaviour of boron in germanium

Suresh Uppal, A.F.W. Willoughby, Janet M. Bonar, Alan G.R. Evans, Nick E.B. Cowern, Richard Morris, Mark G. Dowsett

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

48

Cluster ripening and transient enhanced diffusion in silicon

N.E.B Cowern, G Mannino, P.A Stolk, F Roozeboom, H.G.A Huizing, J.G.M van Berkum, F Cristiano, A Claverie, M Jaraı́z

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

49

Range distributions of energetic ions

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1982

Language:

english

File:

PDF, 292 KB

english, 1982

50

Influence of electronic straggling on ion range distributions

Journal:

Physics Letters A

Year:

1981

Language:

english

File:

PDF, 313 KB

english, 1981